GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel.

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility tran...

Effect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

High-temperature threshold characteristics of a symmetrically graded InAlAs/ InxGa1−xAs/GaAs metamorphic high electron mobility transistor

High-temperature threshold characteristics of a symmetrically graded -doped InAlAs/ InxGa1−xAs/GaAs x=0.5→0.65→0.5 metamorphic high electron mobility transistor MHEMT have been investigated. The thermal threshold coefficients, defined as Vth / T, are superiorly low at 0.9 mV/K from 300 to 420 K and at −0.75 mV/K from 420 to 500 K. An interesting polarity change of the thermal threshold coeffici...

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

MOCVD growth of GaN-based high electron mobility transistor structures